Description

This document covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress.

Product Details

Edition:

1.0

Published:

04/01/2022

ISBN(s):

9782832211016

Number of Pages:

30

File Size:

1 file , 970 KB

Note:

This product is unavailable in Ukraine, Russia, Belarus